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Updated: Mar 23, 2026

Single-Digit Nanometer Electron-Beam Lithography with an Aberration-Corrected Scanning Transmission Electron Microscope
Published on: September 14, 2018
Nanowire growth kinetics in aberration corrected environmental transmission electron microscopy
Yi-Chia Chou1, Federico Panciera2, Mark C Reuter3
1Center for Functional Nanomaterials, Brookhaven National Laboratory, Upton, NY, USA and Department of Electrophysics, College of Science, National Chiao Tung University, Hsinchu, Taiwan. ycchou@nctu.edu.tw and IBM T. J. Watson Research Center, Yorktown Heights, NY, USA. fmross@us.ibm.com.
Abstract:
We visualize atomic level dynamics during Si nanowire growth using aberration corrected environmental transmission electron microscopy, and compare with lower pressure results from ultra-high vacuum microscopy. We discuss the importance of higher pressure observations for understanding growth mechanisms and describe protocols to minimize effects of the higher pressure background gas.
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