Creation of hollow SAPO-34 single crystals via alkaline or acid etching
Yuyan Qiao1, Miao Yang2, Beibei Gao1
1National Engineering Laboratory for Methanol to Olefins, Dalian National Laboratory for Clean Energy, Dalian Institute of Chemical Physics, Chinese Academy of Sciences, Dalian 116023, P. R. China. tianpeng@dicp.ac.cn liuzm@dicp.ac.cn and University of Chinese Academy of Sciences, Beijing 100049, P. R. China.
Abstract:
Hollow SAPO-34 crystals are created via selective etching of their precursor under controlled alkaline or acid conditions. The abundant/interconnected Si-O-Al domains and Si-O-Si networks at the outer layer of SAPO-34 crystals are revealed to be decisive factors for the base and acid treatments respectively to achieve a well-preserved hollow structure.
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