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Encapsulation layer design and scalability in encapsulated vertical 3D RRAM.

Muxi Yu, Yichen Fang, Zongwei Wang

|April 5, 2016

Summary

A novel encapsulated 3D RRAM structure enhances reliability and reduces thermal issues by suppressing oxygen diffusion. Encapsulated bar-electrodes improve individual cell performance and thermal stability in advanced memory devices.

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Area of Science:

Materials Science
Electrical Engineering
Nanotechnology

Background:

Traditional vertical 3D RRAM faces challenges with cell reliability and thermal disturbances.
Oxygen vacancy diffusion is a key factor affecting the performance and scalability of RRAM devices.

Purpose of the Study:

To propose and demonstrate a novel encapsulated vertical 3D resistive random-access memory (RRAM) structure.
To investigate the impact of encapsulation layers on RRAM reliability, thermal stability, and scalability.
To identify optimal encapsulation material properties for future ultrahigh-density storage applications.

Main Methods:

Fabrication of encapsulated vertical 3D RRAM devices using TaOx as the resistive switching material and SiO2/Si3N4 as encapsulation layers.
Experimental characterization of device performance, reliability, and thermal behavior.
Computational simulations to analyze the influence of encapsulation layer properties (thermal conductivity, oxygen blocking) on device scaling.

Main Results:

The encapsulated 3D RRAM structure significantly improves individual cell reliability and reduces thermal disturbance compared to unencapsulated devices.
Oxygen blocking ability is crucial for larger-scale devices, while thermal conductivity becomes dominant at sub-10 nm scaling.
TaOx-based RRAM with SiO2 and Si3N4 encapsulation layers demonstrated substantial advantages.

Conclusions:

Encapsulation layers are critical for enhancing the scalability and reliability of vertical 3D RRAM.
Material selection for encapsulation should consider both oxygen blocking and thermal conductivity, with AlN suggested for optimal performance.
The proposed structure offers a pathway towards reliable ultrahigh-density storage for big data applications.