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Pressure-Dependent Photoluminescence Study of Wurtzite InP Nanowires
Nicolas Chauvin1, Amaury Mavel1,2, Gilles Patriarche3
1Institut des Nanotechnologies de Lyon (INL)-UMR5270-CNRS, Université de Lyon , INSA-Lyon, 7 avenue Jean Capelle, 69621 Villeurbanne, France.
Abstract:
The elastic properties of InP nanowires are investigated by photoluminescence measurements under hydrostatic pressure at room temperature and experimentally deduced values of the linear pressure coefficients are obtained. The pressure-induced energy shift of the A and B transitions yields a linear pressure coefficient of αA = 88.2 ± 0.5 meV/GPa and αB = 89.3 ± 0.5 meV/GPa with a small sublinear term of βA = βB = -2.7 ± 0.2 meV/GPa(2). Effective hydrostatic deformation potentials of -6.12 ± 0.04 and -6.2 ± 0.04 eV are derived from the results for the A and B transitions, respectively. A decrease of the integrated intensity is observed above 0.5 GPa and is interpreted as a carrier transfer from the first to the second conduction band of the wurtzite InP.
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