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Updated: Mar 22, 2026

Fabrication of Gate-tunable Graphene Devices for Scanning Tunneling Microscopy Studies with Coulomb Impurities
Published on: July 24, 2015
Charge Puddles in Graphene near the Dirac Point
S Samaddar1,2, I Yudhistira3, S Adam3,4
1Université Grenoble Alpes, Institut NEEL, F-38042 Grenoble, France.
Abstract:
The charge carrier density in graphene on a dielectric substrate such as SiO_{2} displays inhomogeneities, the so-called charge puddles. Because of the linear dispersion relation in monolayer graphene, the puddles are predicted to grow near charge neutrality, a markedly distinct property from conventional two-dimensional electron gases. By performing scanning tunneling microscopy and spectroscopy on a mesoscopic graphene device, we directly observe the puddles' growth, both in spatial extent and in amplitude, as the Fermi level approaches the Dirac point. Self-consistent screening theory provides a unified description of both the macroscopic transport properties and the microscopically observed charge disorder.
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