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Updated: Mar 22, 2026

Fabrication of Gate-tunable Graphene Devices for Scanning Tunneling Microscopy Studies with Coulomb Impurities
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Structural and Electronic Properties of Nitrogen-Doped Graphene

J Sforzini1,2, P Hapala3, M Franke1,2

  • 1Peter Grünberg Institut (PGI-3), Forschungszentrum Jülich, 52425 Jülich, Germany.

Physical Review Letters
|April 9, 2016
PubMed

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