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Updated: Mar 22, 2026

A Fabrication and Measurement Method for a Flexible Ferroelectric Element Based on Van Der Waals Heteroepitaxy
Published on: April 8, 2018
Qi-Jian Zhang1, Jing-Hui He1, Hao Zhuang1
1College of Chemistry, Chemical Engineering and Materials Science, Collaborative Innovation Center of Suzhou Nano Science and Technology, Soochow University, Suzhou, 215123, P. R. China.
Researchers developed a flexible ternary memory device using small molecules. This novel device offers multilevel data storage, overcoming limitations of traditional binary flexible memory and maintaining performance under bending stress.
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