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High Performance Nonvolatile Transistor Memories Utilizing Functional Polyimide-Based Supramolecular Electrets.

Wei-Yao Tung1, Meng-Hsien Li1, Hung-Chin Wu1

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Chemistry, an Asian Journal
|April 11, 2016
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Summary

New organic field-effect transistor memory devices use supramolecular electrets. Increasing aromatic amine size in the electret enhances hole-trapping and memory window performance, demonstrating tunable device characteristics.

Keywords:
field-effect transistorhydrogen bondingmemory effectsorganic materialspolyimide

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Area of Science:

  • Materials Science
  • Organic Electronics
  • Supramolecular Chemistry

Background:

  • Organic field-effect transistors (OFETs) are crucial for electronic applications.
  • Supramolecular electrets offer a novel approach for charge storage in memory devices.
  • Hydrogen bonding interactions can be utilized to tune electret properties.

Purpose of the Study:

  • To investigate pentacene-based OFET memory devices using supramolecular electrets.
  • To explore the effect of aromatic amine (AM) structure on hole-trapping capability.
  • To optimize electret composition for enhanced memory performance.

Main Methods:

  • Fabrication of OFET memory devices with PI(6FOH-ODPA) and various AMs (AM1-AM4).
  • Systematic investigation of AM phenyl ring size and composition on device characteristics.
  • Characterization of memory window, charge-retention time, and switching stability.

Main Results:

  • Devices with 100% AM/PI ratios showed memory windows of 0 V (AM1), 8.59 V (AM2), 25.97 V (AM3), and 29.95 V (AM4).
  • Hole-trapping capability and memory window increased with larger phenyl ring sizes in AMs.
  • Enhanced memory window observed with increased AM content in the polyimide (PI).
  • Achieved long charge-retention time (~10^4 s) and high ON/OFF ratio (~10^3-10^4).
  • Demonstrated stable switching performance over 100 cycles.

Conclusions:

  • Supramolecular electret composition significantly impacts OFET memory device performance.
  • Aromatic amine structure, specifically phenyl ring size, is a key factor in tuning hole-trapping.
  • These findings enable the design of advanced organic memory devices with tailored electrical characteristics.