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Monolayer Contact Doping of Silicon Surfaces and Nanowires Using Organophosphorus Compounds
Published on: December 2, 2013
Carbon phosphide monolayers with superior carrier mobility
Gaoxue Wang1, Ravindra Pandey1, Shashi P Karna2
1Department of Physics, Michigan Technological University, Houghton, Michigan 49931, USA. gaoxuew@mtu.edu pandey@mtu.edu.
Abstract:
Two dimensional (2D) materials with a finite band gap and high carrier mobility are sought after materials from both fundamental and technological perspectives. In this paper, we present the results based on the particle swarm optimization method and density functional theory which predict three geometrically different phases of the carbon phosphide (CP) monolayer consisting of sp2 hybridized C atoms and sp3 hybridized P atoms in hexagonal networks. Two of the phases, referred to as α-CP and β-CP with puckered or buckled surfaces are semiconducting with highly anisotropic electronic and mechanical properties. More remarkably, they have the lightest electrons and holes among the known 2D semiconductors, yielding superior carrier mobility. The γ-CP has a distorted hexagonal network and exhibits a semi-metallic behavior with Dirac cones. These theoretical findings suggest that the binary CP monolayer is a yet unexplored 2D material holding great promise for applications in high-performance electronics and optoelectronics.

