Jove
Visualize
Contact Us
JoVE
x logofacebook logolinkedin logoyoutube logo
ABOUT JoVE
OverviewLeadershipBlogJoVE Help Center
AUTHORS
Publishing ProcessEditorial BoardScope & PoliciesPeer ReviewFAQSubmit
LIBRARIANS
TestimonialsSubscriptionsAccessResourcesLibrary Advisory BoardFAQ
RESEARCH
JoVE JournalMethods CollectionsJoVE Encyclopedia of ExperimentsArchive
EDUCATION
JoVE CoreJoVE BusinessJoVE Science EducationJoVE Lab ManualFaculty Resource CenterFaculty Site
Terms & Conditions of Use
Privacy Policy
Policies

Related Concept Videos

Diode: Forward bias01:20

Diode: Forward bias

2.7K
In semiconductor devices, diodes play a crucial role in directing current flow, and its operation is primarily categorized into forward bias and reverse bias. A diode is said to be forward-biased when its p-type region is connected to the positive terminal of a battery and its n-type region is linked to the negative terminal. This configuration reduces the potential barrier within the diode, allowing current to flow easily from the p to the n-type region.
The behavior of a diode in forward bias...
2.7K
Diode: Reverse bias01:14

Diode: Reverse bias

2.5K
A diode is reverse-biased when the positive terminal of an external voltage source is connected to the n-type material and the negative terminal to the p-type material. This configuration opposes the natural direction of current flow through the diode, effectively increasing the width of the depletion region and the barrier potential. The reverse bias condition produces a minimal leakage current, primarily due to minority charge carriers. This leakage becomes significant when the reverse...
2.5K
Schottky Barrier Diode01:27

Schottky Barrier Diode

1.3K
Schottky barrier diodes are specialized semiconductor devices characterized by their unique construction. This construction involves combining a metal layer with a moderately doped n-type semiconductor material. This combination leads to the formation of a Schottky barrier, a pivotal element that defines the diode's operational characteristics. The core functionality of Schottky barrier diodes is their capacity to allow current to flow in only one direction due to their distinctive...
1.3K
Small-signal Diode Model01:18

Small-signal Diode Model

1.8K
In analyzing the behavior of diodes in circuits, the relationship between the current through a diode and the voltage across it is of particular interest, especially when considering the effect of a direct current (DC) bias voltage. When applied, this DC bias influences the diode's operating point, known as the Q point, around which the current-voltage (I-V) characteristic of the diode exhibits exponential behavior. Introducing a small, time-varying signal on top of this bias aids in examining...
1.8K
Biasing of P-N Junction01:16

Biasing of P-N Junction

2.5K
The operation of a p-n junction diode involves various biasing conditions, including forward bias, reverse bias, and equilibrium.
In equilibrium, no external voltage is applied across the p-n junction. The depletion region is formed at the junction interface due to the diffusion of carriers, which leaves behind charged dopants, acceptors on the p-side, and donors on the n-side. These immobile charges create an electric field that prevents further diffusion of carriers. The related energy band...
2.5K
MOSFET: Depletion Mode01:20

MOSFET: Depletion Mode

1.1K
Depletion-mode MOSFETs represent a unique subset of MOSFET technology, functioning fundamentally differently from their enhancement-mode counterparts. Unlike enhancement MOSFETs, which require a positive gate-source voltage (Vgs) to turn on, depletion-mode MOSFETs are inherently conductive and "normally on" devices.
The primary characteristic of depletion-mode MOSFETs is their ability to conduct current between the drain and source terminals without gate bias. This inherent conductivity...
1.1K

You might also read

Related Articles

Articles linked to this work by shared authors, journal, and citation graph.

Sort by
Same author

Cyclophane-based shielding strategy for singly dispersed graphene nanoribbons.

Nature chemistry·2026
Same author

Sortase A-Mediated Farnesylation of Cdc42 <i>In Vitro</i>.

ACS synthetic biology·2026
Same author

Charge Injection and Interfiber Electrical Conduction in Cable Bacteria.

ACS applied materials & interfaces·2026
Same author

Computational screening of piezoelectric constants in metal-organic frameworks: design principles and ferroelectric-like bond modulation.

Journal of materials chemistry. A·2026
Same author

Charge Transfer between Quantum Dots and Redox Molecules Is Not Auger-Assisted.

ACS nano·2026
Same author

The role of ionizing radiation-initiated reactions in targeted activation of chemotherapeutics.

Nature reviews. Chemistry·2025
Same journal

Lasing characteristics and stress-tuning effects in GaN beam microcavities.

Nanoscale·2026
Same journal

Unraveling the synergy of core doping and the motif shell in atomically precise PtAg nanoclusters for CF<sub>3</sub>-ketone alkynylation.

Nanoscale·2026
Same journal

A dual-functional heavy-metal-free quantum dot/TiO<sub>2</sub> hybrid system for simultaneous pollutant degradation and green hydrogen production.

Nanoscale·2026
Same journal

Rational design of spherical NiCoB@rGO nanocomposites for efficient electrochemical energy storage.

Nanoscale·2026
Same journal

Ligand-controlled engineering of Cu-H active sites on Cu<sub>25</sub> hydride nanoclusters for efficient CO<sub>2</sub> electroreduction.

Nanoscale·2026
Same journal

Isostructural Co/Ni-containing banana-shaped polyoxometalates for visible-light-driven hydrogen production.

Nanoscale·2026
See all related articles

Related Experiment Video

Updated: Mar 22, 2026

Silicon Metal-oxide-semiconductor Quantum Dots for Single-electron Pumping
14:58

Silicon Metal-oxide-semiconductor Quantum Dots for Single-electron Pumping

Published on: June 3, 2015

15.5K

A gate-tunable single-molecule diode.

Mickael L Perrin1, Elena Galán, Rienk Eelkema

  • 1Kavli Institute of Nanoscience, Delft University of Technology, Lorentzweg 1, 2628 CJ Delft, The Netherlands. H.S.J.vanderZant@tudelft.nl.

Nanoscale
|April 14, 2016
PubMed
Summary
This summary is machine-generated.

Researchers developed a gate-tunable single-molecule rectifier, achieving high rectification ratios. This breakthrough demonstrates the viability of molecular orbital structure for electronic device functionality, advancing molecular electronics.

More Related Videos

All-electronic Nanosecond-resolved Scanning Tunneling Microscopy: Facilitating the Investigation of Single Dopant Charge Dynamics
11:33

All-electronic Nanosecond-resolved Scanning Tunneling Microscopy: Facilitating the Investigation of Single Dopant Charge Dynamics

Published on: January 19, 2018

10.4K
Fabrication of a Solution-gated Indium-Tin-Oxide-based One-piece Transistor Enabling Sensitive Biosensing
10:45

Fabrication of a Solution-gated Indium-Tin-Oxide-based One-piece Transistor Enabling Sensitive Biosensing

Published on: August 29, 2025

820

Related Experiment Videos

Last Updated: Mar 22, 2026

Silicon Metal-oxide-semiconductor Quantum Dots for Single-electron Pumping
14:58

Silicon Metal-oxide-semiconductor Quantum Dots for Single-electron Pumping

Published on: June 3, 2015

15.5K
All-electronic Nanosecond-resolved Scanning Tunneling Microscopy: Facilitating the Investigation of Single Dopant Charge Dynamics
11:33

All-electronic Nanosecond-resolved Scanning Tunneling Microscopy: Facilitating the Investigation of Single Dopant Charge Dynamics

Published on: January 19, 2018

10.4K
Fabrication of a Solution-gated Indium-Tin-Oxide-based One-piece Transistor Enabling Sensitive Biosensing
10:45

Fabrication of a Solution-gated Indium-Tin-Oxide-based One-piece Transistor Enabling Sensitive Biosensing

Published on: August 29, 2025

820

Area of Science:

  • Molecular electronics
  • Nanoscience
  • Organic electronics

Background:

  • The quest for miniaturizing electronic components drives research towards single-molecule devices.
  • The Aviram-Ratner rectifier, proposed over 40 years ago, theoretically demonstrated molecular rectification based on orbital structure.
  • Experimental realization of single-molecule rectifiers has remained a significant challenge.

Purpose of the Study:

  • To experimentally realize a functional single-molecule rectifier.
  • To investigate the gate tunability of molecular rectification.
  • To confirm the operative mechanism of rectification based on molecular orbital structure.

Main Methods:

  • Fabrication and characterization of a gate-tunable single-molecule device.
  • Measurement of electrical transport properties to determine rectification ratios.
  • Analysis of molecular structure and electronic coupling to elucidate the rectification mechanism.

Main Results:

  • Successful experimental realization of a gate-tunable single-molecule rectifier.
  • Achieved high rectification ratios, reaching up to 600.
  • Demonstrated gate voltage control over the rectification performance.
  • Confirmed rectification mechanism relies on molecular structure with conjugated sites and a saturated linker.

Conclusions:

  • The study presents a significant advancement in the field of molecular electronics.
  • The demonstrated gate-tunable single-molecule rectifier validates theoretical predictions and opens new avenues for molecular device applications.
  • The findings highlight the potential of exploiting molecular orbital structure for future electronic components.