Related Experiment Video
Updated: Mar 22, 2026
10:31
Plasma-assisted Molecular Beam Epitaxy of N-polar InAlN-barrier High-electron-mobility Transistors
Published on: November 24, 2016
9.1K
Ambient temperature deposition of gallium nitride/gallium oxynitride from a deep eutectic electrolyte, under
1Department of Inorganic and Physical Chemistry, Indian Institute of Science, Bangalore-560012, India. sampath@ipc.iisc.ernet.in.
Chemical Communications (Cambridge, England)
|April 14, 2016
Abstract:
A ternary, ionically conducting, deep eutectic solvent based on acetamide, urea and gallium nitrate is reported for the electrodeposition of gallium nitride/gallium indium nitride under ambient conditions; blue and white light emitting photoluminescent deposits are obtained under potential control.
