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Carrier-induced transient defect mechanism for non-radiative recombination in InGaN light-emitting devices

Junhyeok Bang1,2, Y Y Sun1, Jung-Hoon Song3

  • 1Department of Physics, Applied Physics &Astronomy, Rensselaer Polytechnic Institute, Troy, NY 12180, USA.

Scientific Reports
|April 15, 2016
PubMed

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