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Nanofabrication of Gate-defined GaAs/AlGaAs Lateral Quantum Dots
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Half adder capabilities of a coupled quantum dot device

P Pfeffer1, F Hartmann, I Neri

  • 1Technische Physik and Wilhelm Conrad Röntgen Research Center for Complex Material Systems, Physikalisches Institut, Universität Würzburg, Am Hubland, D-97074 Würzburg, Germany.

Nanotechnology
|April 16, 2016
PubMed

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