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10:40
A Fabrication and Measurement Method for a Flexible Ferroelectric Element Based on Van Der Waals Heteroepitaxy
Published on: April 8, 2018
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Pulse-modulated multilevel data storage in an organic ferroelectric resistive memory diode
Jiyoul Lee1,2, Albert J J M van Breemen1, Vsevolod Khikhlovskyi1,3
1Holst Centre/TNO, High Tech Campus 31, 5656 AE Eindhoven, The Netherlands.
Scientific Reports
|April 16, 2016
Summary
This study showcases multilevel data storage in organic ferroelectric memory diodes. By utilizing a phase-separated blend, researchers achieved 2-bit data storage, doubling density and reducing costs.
Area of Science:
- Organic electronics
- Materials science
- Data storage technologies
Background:
- Organic ferroelectric resistive memory diodes offer potential for high-density data storage.
- Previous limitations included challenges in achieving stable multilevel states and cost-effectiveness.
Purpose of the Study:
- To demonstrate multilevel data storage in organic ferroelectric resistive memory diodes.
- To enhance storage density and reduce the cost per bit using a novel material blend.
Main Methods:
- Fabrication of memory diodes using a phase-separated blend of P(VDF-TrFE) and a semiconducting polymer.
- Application of the inhomogeneous field mechanism (IFM) model to describe diode behavior.
- Utilizing controlled programming pulses for writing and reading multilevel polarization states.
Main Results:
- Stable multilevel polarization states were successfully written and non-destructively read.
- Achieved 2-bit data storage per memory element, effectively doubling storage density.
- Demonstrated reduced cost per bit without increased technological complexity.
Conclusions:
- Multilevel data storage is feasible in organic ferroelectric resistive memory diodes.
- The IFM model accurately describes the dynamic behavior for stable multilevel storage.
- This approach offers a cost-effective pathway to higher storage densities in organic memory devices.
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