Related Experiment Video
Updated: Mar 22, 2026

05:39
Scalable Quantum Integrated Circuits on Superconducting Two-Dimensional Electron Gas Platform
Published on: August 2, 2019
10.5K
Electron Phase Shift at the Zero-Bias Anomaly of Quantum Point Contacts
Physical Review Letters
|April 16, 2016
Summary
Researchers provide new evidence for the Kondo effect in quantum point contacts. Phase-sensitive measurements reveal a half-period fringe shift, supporting this many-body phenomenon
Area of Science:
- Condensed Matter Physics
- Quantum Phenomena
- Mesoscopic Physics
Background:
- The Kondo effect describes electron screening of local spins at low temperatures.
- It's a proposed explanation for the zero-bias anomaly in quantum point contacts.
- Experimental verification of the Kondo origin of this anomaly is needed.
Purpose of the Study:
- To provide phase-sensitive experimental evidence for the Kondo effect in quantum point contacts.
- To investigate the origin of the zero-bias anomaly in these systems.
- To differentiate between many-body and single-particle explanations.
Main Methods:
- Utilized a scanning gate microscope to construct an electronic interferometer.
- Performed phase-sensitive measurements of the zero-bias anomaly.
- Analyzed interference fringe shifts in response to varying bias.
Main Results:
- Observed an abrupt half-period shift in interference fringes within the zero-bias anomaly's bias range.
- Single-particle models failed to reproduce this observed fringe shift.
- The results align with theoretical predictions for phase shifts in Kondo systems.
Conclusions:
- The experiment provides the first phase-sensitive evidence for the Kondo effect in quantum point contacts.
- This finding supports the many-body explanation for the zero-bias anomaly.
- The study offers crucial experimental validation for a fundamental quantum phenomenon.
Related Concept Videos
P-N junction
1.6K
A p-n junction is formed when p-type and n-type semiconductor materials are joined together. At the interface of the p-n junction, holes from the p-side and electrons from the n-side begin to diffuse into the opposite sides due to the concentration gradient. This diffusion of carriers leads to a region around the junction where there are no free charge carriers, known as the depletion region. The charge density within the depletion region for the n-side and p-side can be described by the...
1.6K
Biasing of Metal-Semiconductor Junctions
800
Biasing metal-semiconductor junctions involves applying a voltage across the junction. Specifically, the metal is connected to a voltage source, while the semiconductor is grounded. This technique is essential for controlling the direction and magnitude of current flow in electronic devices, including diodes, transistors, and photovoltaic cells.
In Schottky junctions, where the semiconductor is n-type, applying a positive voltage to the metal relative to the semiconductor reduces its Fermi...
In Schottky junctions, where the semiconductor is n-type, applying a positive voltage to the metal relative to the semiconductor reduces its Fermi...
800
Metal-Semiconductor Junctions
1.3K
The contact of metal and semiconductor can lead to the formation of a junction with either Schottky or Ohmic behavior.
Schottky Barriers
Schottky barriers arise when a metal with a work function (Φm) contacts a semiconductor with a different work function (Φs). Initially, electrons transfer until the Fermi levels of the metal and semiconductor align at equilibrium. For instance, if Φm > Φs, the semiconductor Fermi level is higher than the metal's before contact. The...
Schottky Barriers
Schottky barriers arise when a metal with a work function (Φm) contacts a semiconductor with a different work function (Φs). Initially, electrons transfer until the Fermi levels of the metal and semiconductor align at equilibrium. For instance, if Φm > Φs, the semiconductor Fermi level is higher than the metal's before contact. The...
1.3K
π Electron Effects on Chemical Shift: Overview
1.9K
An applied magnetic field causes loosely bound π-electrons in organic molecules to circulate, producing a local or induced diamagnetic field over a large spatial volume. As the molecules tumble in solution, the field generated by π-electrons in spherical substituents results in a zero net field. However, the net field generated by π-electrons in non-spherical substituents is not zero. The effect of this induced field depends on the orientation of the molecule with respect to B0,...
1.9K
π Electron Effects on Chemical Shift: Aromatic and Antiaromatic Compounds
2.0K
In aromatic compounds, such as benzene, the circulation of (4n + 2) π-electrons sets up a diamagnetic or diatropic ring current around the perimeter of the molecule. This current induces a magnetic field that opposes the external field inside the ring and reinforces it on the outside. The protons in benzene are deshielded and exhibit high chemical shifts in the range 6.5–8.5 ppm. The shielding effect at the center of the ring is evident in complex aromatic molecules, such as...
2.0K
Biasing of P-N Junction
2.5K
The operation of a p-n junction diode involves various biasing conditions, including forward bias, reverse bias, and equilibrium.
In equilibrium, no external voltage is applied across the p-n junction. The depletion region is formed at the junction interface due to the diffusion of carriers, which leaves behind charged dopants, acceptors on the p-side, and donors on the n-side. These immobile charges create an electric field that prevents further diffusion of carriers. The related energy band...
In equilibrium, no external voltage is applied across the p-n junction. The depletion region is formed at the junction interface due to the diffusion of carriers, which leaves behind charged dopants, acceptors on the p-side, and donors on the n-side. These immobile charges create an electric field that prevents further diffusion of carriers. The related energy band...
2.5K

