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Patterning Superatom Dopants on Transition Metal Dichalcogenides.

Jaeeun Yu¹, Chul-Ho Lee², Delphine Bouilly¹

¹Department of Chemistry, Columbia University , New York, New York 10027, United States.

|April 16, 2016

Summary

Researchers developed a simple chemical method to electron-dope 2D transition metal dichalcogenides (TMDCs) using superatoms. This technique allows for controlled doping and patterning, enabling the creation of novel electronic devices like p-n junctions.

Keywords:

Transition metal dichalcogenide chemical doping encapsulation lateral junction superatom

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Area of Science:

Materials Science
Condensed Matter Physics
Nanotechnology

Background:

Two-dimensional transition metal dichalcogenides (TMDCs) are promising semiconductors for next-generation electronics.
Controlling the electronic properties of TMDCs, such as their carrier concentration, is crucial for device applications.
Existing doping methods often involve complex fabrication processes or harsh conditions.

Purpose of the Study:

To introduce a straightforward chemical approach for electron doping of TMDCs.
To demonstrate the tunability and controllability of the doping process.
To showcase the potential of this method for fabricating advanced electronic devices.

Main Methods:

Utilizing the superatom Co6Se8(PEt3)6 as an electron dopant for TMDCs.
Immersing field-effect transistor devices made from TMDCs into solutions of the superatom dopant.
Varying superatom concentration and immersion time to control the doping level.
Patterning the superatom doping on specific regions of TMDC films.
Encapsulating doped TMDC films with hydrocarbon layers for ambient stability.

Main Results:

Achieved moderate to heavy electron doping in mono- and few-layer molybdenum disulfide (MoS2) samples.
Transformed tungsten diselenide (WSe2) films from hole-transporting to electron-transporting.
Demonstrated successful patterning of superatom doping on TMDC surfaces.
Fabricated a lateral p-n junction in a WSe2 device by selective area doping.
Showcased enhanced stability of doped TMDC properties after encapsulation.

Conclusions:

The superatom doping method offers a simple, effective, and tunable route to modify the electronic properties of TMDCs.
This technique enables the fabrication of complex device architectures, such as p-n junctions, with high precision.
The developed approach holds significant potential for advancing the development of 2D material-based electronic and optoelectronic devices.