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Resonance Fluorescence of an InGaAs Quantum Dot in a Planar Cavity Using Orthogonal Excitation and Detection
Published on: October 13, 2017
Xin Huang1, Chunhua Du1, Yongli Zhou1
1Beijing Institute of Nanoenergy and Nanosystems, Chinese Academy of Sciences , Beijing 100083, People's Republic of China.
This study introduces a quantum mechanical model for the piezo-phototronic effect in nanoscale devices. It explains how quantum confinement influences device performance, validated by experiments on GaN/InGaN quantum wells.
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