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A comprehensive analysis of the (√13 × √13)R13.9° type II structure of silicene on Ag(1 1 1)
H Jamgotchian1, B Ealet1, H Maradj1,2
1Aix-Marseille Université, CNRS, CINaM, UMR 7325, 13288 Marseille, France.
None:
In this paper, using the same geometrical approach as for the (2 √ 3 × 2 √ 3)R30° structure (Jamgotchian et al 2015 J. Phys.: Condens. Matter 27 395002), for the (√13 × √13)R13.9° type II structure, we propose an atomic model of the silicene layer based on a periodic relaxation of the strain epitaxy. This relaxation creates periodic arrangements of perfect areas of (√13 × √13)R13.9° type II structure surrounded by defect areas. A detailed analysis of the main published experimental results, obtained by scanning tunneling microscopy and by low energy electron diffraction, shows a good agreement with the geometrical model.
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