Related Experiment Video
Updated: Mar 22, 2026

Solution-Processed "Silver-Bismuth-Iodine" Ternary Thin Films for Lead-Free Photovoltaic Absorbers
Published on: September 27, 2018
A Simple Aqueous Precursor Solution Processing of Earth-Abundant Cu2SnS3 Absorbers for Thin-Film Solar Cells
Mahesh P Suryawanshi1, Uma V Ghorpade1, Seung Wook Shin2
1Department of Materials Science and Engineering and Optoelectronics Convergence Research Center, Chonnam National University , 300, Yongbong-Dong, Buk-Gu, Gwangju 500-757, South Korea.
Abstract:
A simple and eco-friendly method of solution processing of Cu2SnS3 (CTS) absorbers using an aqueous precursor solution is presented. The precursor solution was prepared by mixing metal salts into a mixture of water and ethanol (5:1) with monoethanolamine as an additive at room temperature. Nearly carbon-free CTS films were formed by multispin coating the precursor solution and heat treating in air followed by rapid thermal annealing in S vapor atmosphere at various temperatures. Exploring the role of the annealing temperature in the phase, composition, and morphological evolution is essential for obtaining highly efficient CTS-based thin film solar cells (TFSCs). Investigations of CTS absorber layers annealed at various temperatures revealed that the annealing temperature plays an important role in further improving device properties and efficiency. A substantial improvement in device efficiency occurred only at the critical annealing temperature, which produces a compact and void-free microstructure with large grains and high crystallinity as a pure-phase absorber layer. Finally, at an annealing temperature of 600 °C, the CTS thin film exhibited structural, compositional, and microstructural isotropy by yielding a reproducible power conversion efficiency of 1.80%. Interestingly, CTS TFSCs exhibited good stability when stored in an air atmosphere without encapsulation at room temperature for 3 months, whereas the performance degraded slightly when subjected to accelerated aging at 80 °C for 100 h under normal laboratory conditions.
More Related Videos
09:01Fabrication of Robust Nanoscale Contact between a Silver Nanowire Electrode and CdS Buffer Layer in CuIn,GaSe2 Thin-film Solar Cells
Published on: July 19, 2019
08:14Improved Heterojunction Quality in Cu2O-based Solar Cells Through the Optimization of Atmospheric Pressure Spatial Atomic Layer Deposited Zn1-xMgxO
Published on: July 31, 2016