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Real-Space Visualization of Energy Loss and Carrier Diffusion in a Semiconductor Nanowire Array Using 4D Electron

Riya Bose1, Jingya Sun1, Jafar I Khan1

  • 1Solar and Photovoltaics Engineering Research Center, Division of Physical Sciences and Engineering, King Abdullah University of Science and Technology (KAUST), Thuwal, 23955-6900, Kingdom of Saudi Arabia.

Advanced Materials (Deerfield Beach, Fla.)
|April 26, 2016
PubMed

Keywords:
InGaNcarrier diffusioncarrier dynamicsnanowiresreal-space imagingsurface dynamicsultrafast electron microscopy

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Carrier Transport01:21

Carrier Transport

The generation of electrical current in semiconductors is fundamentally driven by two mechanisms: drift and diffusion. These processes are essential for the functionality and performance of semiconductor-based devices.
Drift Current:
The drift of charge carriers is started by an external electric field (E). Charged particles, such as electrons and holes, experience an acceleration between collisions with lattice atoms. For electrons, this results in a drift velocity (vd) given by:
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