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Mechanism of stress-driven composition evolution during hetero-epitaxy in a ternary AlGaN system

Chenguang He1, Zhixin Qin1, Fujun Xu1

  • 1State Key Laboratory of Artificial Microstructure and Mesoscopic Physics, School of Physics, Peking University, Beijing 100871, China.

Scientific Reports
|April 27, 2016
PubMed

Keywords:
AlGaN compositionhetero-epitaxy stressmisfit dislocationsstrain relaxationsemiconductor growth

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