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Related Concept Videos

Semiconductors01:22

Semiconductors

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There is variation in the electrical conductivity of materials - metals, semiconductors, and insulators that are showcased with the help of the energy band diagrams.
Metals such as copper (Cu), zinc (Zn), or lead (Pb) have low resistivity and feature conduction bands that are either not fully occupied or overlap with the valence band, making a bandgap non-existent. This allows electrons in the highest energy levels of the valence band to easily transition to the conduction band upon gaining...
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Intrinsic semiconductors are highly pure materials with no impurities. At absolute zero, these semiconductors behave as perfect insulators because all the valence electrons are bound, and the conduction band is empty, disallowing electrical conduction. The Fermi level is a concept used to describe the probability of occupancy of energy levels by electrons at thermal equilibrium. In intrinsic semiconductors, the Fermi level is positioned at the midpoint of the energy gap at absolute zero. When...
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Carrier Generation and Recombination01:22

Carrier Generation and Recombination

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Carrier generation is the process by which electron-hole pairs (EHPs) are created within the semiconductor. In direct-bandgap semiconductors, such as gallium arsenide (GaAs), this occurs efficiently when energy absorption prompts valence electrons to leap into the conduction band, leaving behind holes.
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Energy Bands in Solids01:01

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Isolated atoms have discrete energy levels that are well described by the Bohr model. And, it quantifies the energy of an electron in a hydrogen atom as En. Higher quantum numbers 'n' yield less negative, closer electron energy levels.
 Band Formation:
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Biasing metal-semiconductor junctions involves applying a voltage across the junction. Specifically, the metal is connected to a voltage source, while the semiconductor is grounded. This technique is essential for controlling the direction and magnitude of current flow in electronic devices, including diodes, transistors, and photovoltaic cells.
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Metal-Semiconductor Junctions01:24

Metal-Semiconductor Junctions

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The contact of metal and semiconductor can lead to the formation of a junction with either Schottky or Ohmic behavior.
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Schottky barriers arise when a metal with a work function (Φm) contacts a semiconductor with a different work function (Φs). Initially, electrons transfer until the Fermi levels of the metal and semiconductor align at equilibrium. For instance, if Φm > Φs, the semiconductor Fermi level is higher than the metal's before contact. The...
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Enhanced Electron Injection and Exciton Confinement for Pure Blue Quantum-Dot Light-Emitting Diodes by Introducing Partially Oxidized Aluminum Cathode
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Partial Oxidized Arsenene: Emerging Tunable Direct Bandgap Semiconductor.

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Area of Science:

  • Materials Science
  • Condensed Matter Physics
  • Nanotechnology

Background:

  • Two-dimensional (2D) materials, such as arsenene, are emerging with significant potential.
  • The indirect bandgap of pristine arsenene hinders its use in optoelectronic applications.
  • Developing methods to engineer the electronic properties of 2D materials is crucial.

Purpose of the Study:

  • To investigate the effect of partial oxidation on the electronic band structure of arsenene.
  • To explore the possibility of tuning arsenene's indirect bandgap to a direct one.
  • To assess the potential of oxidized arsenene for optoelectronic devices.

Main Methods:

  • Theoretical calculations were employed to study the electronic properties of partially oxidized arsenene.
  • The impact of varying oxygen content on the bandgap was systematically analyzed.
  • The thermodynamic feasibility of controlled oxidation at low temperatures was considered.

Main Results:

  • Partial oxidation successfully converted the indirect bandgap of arsenene to a direct bandgap.
  • The direct bandgap of oxidized arsenene was found to be tunable, ranging from 1.29 eV to 0.02 eV.
  • A linear relationship was observed between oxygen content and the resulting direct bandgap size.
  • Controlled, progressive oxidation at low temperatures is feasible due to decreasing enthalpy with increasing oxygen ratio.

Conclusions:

  • Partial oxidation is an effective strategy to engineer the bandgap of arsenene.
  • Oxidized arsenene exhibits a tunable direct bandgap, making it suitable for optoelectronics.
  • This material shows promise for applications in high-efficiency infrared light emitters and photovoltaic devices.