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Fully Solution-Processed and Foldable Metal-Oxide Thin-Film Transistor.

Su Jeong Lee1, Jieun Ko2, Ki-Ho Nam3

  • 1Department of Materials Science and Engineering, Yonsei University , Seoul 120-749, Republic of Korea.

ACS Applied Materials & Interfaces
|April 28, 2016
PubMed
Summary

This study presents fully solution-processed, foldable thin-film transistors (TFTs) with high transparency and performance. These devices exhibit excellent mechanical stability, maintaining functionality after extensive folding, paving the way for next-generation flexible electronics.

Keywords:
flexiblefoldingintegrationsolution-processthin-film transistors

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Area of Science:

  • Materials Science
  • Electronics Engineering
  • Nanotechnology

Background:

  • Flexible and foldable thin-film transistors (TFTs) are crucial for next-generation displays.
  • Existing methods often face challenges in achieving high performance, low cost, and robust mechanical properties.

Purpose of the Study:

  • To fabricate high-performance, transparent, and mechanically stable foldable TFTs using a fully solution process.
  • To evaluate the electrical and mechanical properties of these solution-processed TFTs under various conditions.

Main Methods:

  • Fabrication of TFT devices using a fully solution process involving PI, YOx, In2O3, SWCNTs, IL-PVP, and Ag NWs.
  • Characterization of transmittance, charge-carrier mobility, Ion/Ioff ratio, and electrical performance under tensile strain and repeated folding.
  • Assessment of device stability over 5,000 folding cycles.

Main Results:

  • Achieved high transmittance (>86%) in the visible range.
  • Demonstrated excellent electrical performance with charge-carrier mobility of 7.12 cm²/V·s and Ion/Ioff ratio of 5.53 × 10⁵ at 3 V.
  • Maintained good electrical characteristics under 26.79% strain and retained over 79% mobility after 5,000 folding cycles (1 mm bending radius).

Conclusions:

  • The fully solution-processed TFTs exhibit robust mechanical flexibility, high transparency, and superior electrical performance.
  • These findings highlight the potential of this approach for developing advanced flexible electronic devices for future applications.