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Prediction of the Strain Response of Poly-AlN/(100)Si Surface Acoustic Wave Resonator and Experimental Analysis
1Department of Precision Instrument, Tsinghua University, Beijing 100084, China. chenshuo_tsinghua@126.com.
Abstract:
The strain sensitivity of the Aluminum Nitride (AlN)/Silicon (Si) surface acoustic wave resonator (SAWR) is predicted based on a modeling method introduced in this work, and further compared with experimental results. The strain influence on both the period of the inter-digital transducer (IDT) and the sound velocity is taken into consideration when modeling the strain response. From the modeling results, AlN and Si have opposite responses to strain; hence, for the AlN/Si-based SAWR, both a positive and a negative strain coefficient factor can be achieved by changing the thickness of the AlN layer, which is confirmed by strain response testing based on a silicon cantilever structure with two AlN configurations (1 μm and 3 μm in thickness, respectively).
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