On-chip integration of suspended InGaN/GaN multiple-quantum-well devices with versatile functionalities

Area of Science:

• Optoelectronics
• Materials Science
• Nanotechnology

Background:

• Gallium Nitride (GaN)-on-Silicon platforms are crucial for optoelectronic devices.
• Integrating multiple quantum wells (MQWs) enables advanced photonic functionalities.
• On-chip photonic integration is key for miniaturized communication and sensing systems.

Purpose of the Study:

• To propose, fabricate, and demonstrate on-chip photonic integration of suspended InGaN/GaN MQWs devices.
• To achieve in-plane information transmission using a GaN-on-silicon platform.
• To explore the potential for free-space visible light communication and active electro-optical sensing.

Main Methods:

• Fabrication of membrane-type devices via silicon removal and back wafer etching.
• Utilizing suspended waveguides for interconnections between p-n junction InGaN/GaN MQWs devices.
• Modulating light intensity from a central light-emitting diode (LED) for data transmission and using photodetectors (PDs) for signal reception.

Main Results:

• Successful demonstration of 1x2 in-plane information transmission using visible light.
• Validation of devices functioning as independent photodetectors for multiple receivers.
• Confirmation that auxiliary LED sources can enhance induced photocurrent amplitude in sensing applications.

Conclusions:

• The developed GaN-on-silicon platform enables efficient on-chip photonic integration of suspended InGaN/GaN MQWs.
• The system supports versatile applications including in-plane data transmission, free-space communication, and electro-optical sensing.
• This work paves the way for advanced integrated optoelectronic systems on a silicon platform.