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Silicon photonic waveguide metrology using Mach-Zehnder interferometers
Optics Express
|May 4, 2016
Summary
We present a non-destructive method to map silicon photonics fabrication variations across wafers. This technique precisely characterizes silicon-on-insulator thickness and waveguide width deviations, crucial for integrated devices.
Area of Science:
- Photonics
- Materials Science
- Semiconductor Manufacturing
Background:
- Fabrication deviations in silicon photonics impact device performance.
- Understanding spatial distribution of variations is key for yield optimization.
- Wavelength-dependent devices like microring resonators are sensitive to these variations.
Purpose of the Study:
- To develop a precise, non-destructive procedure for characterizing fabrication deviations in silicon photonics.
- To map variations in silicon-on-insulator (SOI) thickness and waveguide width across a wafer.
- To enable characterization of proximity effects in fabrication.
Main Methods:
- Independent measurements of SOI thickness and waveguide width.
- Wafer-level mapping of these deviations.
- Application of the technique to characterize proximity effects.
Main Results:
- Precise, non-destructive characterization of fabrication deviations is achieved.
- Spatial distribution of SOI thickness and waveguide width variations across the wafer is mapped.
- The method successfully identifies proximity effects.
Conclusions:
- The proposed procedure offers a valuable tool for quality control in silicon photonics manufacturing.
- Accurate characterization of fabrication variations improves the performance and yield of integrated photonic devices.
- This technique aids in understanding and mitigating proximity effects during fabrication.
