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Updated: Mar 21, 2026

In Situ Transmission Electron Microscopy with Biasing and Fabrication of Asymmetric Crossbars Based on Mixed-Phased a-VOx
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Joule Heating-Induced Metal-Insulator Transition in Epitaxial VO2/TiO2 Devices

Dasheng Li, Abhishek A Sharma, Darshil K Gala

  • 1Department of Electrical Engineering, University of Notre Dame , Notre Dame, Indiana 46556, United States.

ACS Applied Materials & Interfaces
|May 4, 2016
PubMed

Keywords:
Joule heatingepitaxial thin filmmetal−insulator transitionthreshold switchingvanadium dioxide

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