Jove
Visualize
Contact Us
JoVE
x logofacebook logolinkedin logoyoutube logo
ABOUT JoVE
OverviewLeadershipBlogJoVE Help Center
AUTHORS
Publishing ProcessEditorial BoardScope & PoliciesPeer ReviewFAQSubmit
LIBRARIANS
TestimonialsSubscriptionsAccessResourcesLibrary Advisory BoardFAQ
RESEARCH
JoVE JournalMethods CollectionsJoVE Encyclopedia of ExperimentsArchive
EDUCATION
JoVE CoreJoVE BusinessJoVE Science EducationJoVE Lab ManualFaculty Resource CenterFaculty Site
Terms & Conditions of Use
Privacy Policy
Policies

Related Concept Videos

Biasing of Metal-Semiconductor Junctions01:27

Biasing of Metal-Semiconductor Junctions

796
Biasing metal-semiconductor junctions involves applying a voltage across the junction. Specifically, the metal is connected to a voltage source, while the semiconductor is grounded. This technique is essential for controlling the direction and magnitude of current flow in electronic devices, including diodes, transistors, and photovoltaic cells.
In Schottky junctions, where the semiconductor is n-type, applying a positive voltage to the metal relative to the semiconductor reduces its Fermi...
796
Semiconductors01:22

Semiconductors

1.8K
There is variation in the electrical conductivity of materials - metals, semiconductors, and insulators that are showcased with the help of the energy band diagrams.
Metals such as copper (Cu), zinc (Zn), or lead (Pb) have low resistivity and feature conduction bands that are either not fully occupied or overlap with the valence band, making a bandgap non-existent. This allows electrons in the highest energy levels of the valence band to easily transition to the conduction band upon gaining...
1.8K
Metal-Semiconductor Junctions01:24

Metal-Semiconductor Junctions

1.3K
The contact of metal and semiconductor can lead to the formation of a junction with either Schottky or Ohmic behavior.
Schottky Barriers
Schottky barriers arise when a metal with a work function (Φm) contacts a semiconductor with a different work function (Φs). Initially, electrons transfer until the Fermi levels of the metal and semiconductor align at equilibrium. For instance, if Φm > Φs, the semiconductor Fermi level is higher than the metal's before contact. The...
1.3K
Types of Semiconductors01:20

Types of Semiconductors

1.7K
Intrinsic semiconductors are highly pure materials with no impurities. At absolute zero, these semiconductors behave as perfect insulators because all the valence electrons are bound, and the conduction band is empty, disallowing electrical conduction. The Fermi level is a concept used to describe the probability of occupancy of energy levels by electrons at thermal equilibrium. In intrinsic semiconductors, the Fermi level is positioned at the midpoint of the energy gap at absolute zero. When...
1.7K
Schottky Barrier Diode01:27

Schottky Barrier Diode

1.2K
Schottky barrier diodes are specialized semiconductor devices characterized by their unique construction. This construction involves combining a metal layer with a moderately doped n-type semiconductor material. This combination leads to the formation of a Schottky barrier, a pivotal element that defines the diode's operational characteristics. The core functionality of Schottky barrier diodes is their capacity to allow current to flow in only one direction due to their distinctive...
1.2K
Hyperbolas01:30

Hyperbolas

520
A hyperbola is a conic section produced when a double-napped cone is intersected by a plane at an angle steeper than the slope of the cone, such that it cuts through both nappes. This intersection yields two separate, mirror-image curves known as branches, which open away from each other along the transverse axis. The nearest points on each branch to the hyperbola’s center are termed vertices, and the distance from the center to a vertex is denoted by a. Perpendicular to the transverse...
520

You might also read

Related Articles

Articles linked to this work by shared authors, journal, and citation graph.

Sort by
Same author

First Search for B→X_{s}νν[over ¯] Decays.

Physical review letters·2026
Same author

Beta-Decay Half-Lives beyond ^{54}Ca: A Systematic Survey of Decay Properties Approaching the Neutron Dripline.

Physical review letters·2026
Same author

Commentary on: Inspiratory Muscle Training, with or without Pulmonary Rehabilitation, for COPD: A Critical Appraisal of a Cochrane Review.

Journal of the Association of Chartered Physiotherapists in Respiratory Care·2025
Same author

Environmental sustainability of clinical laboratories: A scoping review.

Annals of clinical biochemistry·2025
Same author

Search for B^{0}→K^{*0}τ^{+}τ^{-} Decays at the Belle II Experiment.

Physical review letters·2025
Same author

Search for a Dark Higgs Boson Produced in Association with Inelastic Dark Matter at the Belle II Experiment.

Physical review letters·2025
Same journal

Denoising algorithm of Φ-OTDR systems based on adaptive fractional wavelet transform denoising.

Optics express·2026
Same journal

Millisecond photon-to-photon latency and high-speed volumetric projection system for optogenetics.

Optics express·2026
Same journal

Polarization-encoded coaxial structured light for high-precision 3D surface profilometry.

Optics express·2026
Same journal

Discrete freeform optical design based on collaborative optimization of point cloud and local normals.

Optics express·2026
Same journal

Ultrafast ghost imaging with 25 GHz speckle switching and wavelength-division multiplexing.

Optics express·2026
Same journal

Atomic vapor cells fabricated by femtosecond laser welding of standard-optical-quality glass.

Optics express·2026
See all related articles

Related Experiment Video

Updated: Mar 21, 2026

Simulation, Fabrication and Characterization of THz Metamaterial Absorbers
13:44

Simulation, Fabrication and Characterization of THz Metamaterial Absorbers

Published on: December 27, 2012

16.0K

Single-material semiconductor hyperbolic metamaterials.

D Wei, C Harris, C C Bomberger

    Optics Express
    |May 4, 2016
    PubMed
    Summary
    This summary is machine-generated.

    Researchers developed tunable mid-infrared hyperbolic metamaterials using indium arsenide (InAs). These materials exhibit designer optical properties and demonstrate negative refraction, paving the way for advanced optical devices.

    More Related Videos

    Fabricating Metamaterials Using the Fiber Drawing Method
    11:57

    Fabricating Metamaterials Using the Fiber Drawing Method

    Published on: October 18, 2012

    14.4K
    Demonstration of Equal-Intensity Beam Generation by Dielectric Metasurfaces
    09:33

    Demonstration of Equal-Intensity Beam Generation by Dielectric Metasurfaces

    Published on: June 7, 2019

    6.8K

    Related Experiment Videos

    Last Updated: Mar 21, 2026

    Simulation, Fabrication and Characterization of THz Metamaterial Absorbers
    13:44

    Simulation, Fabrication and Characterization of THz Metamaterial Absorbers

    Published on: December 27, 2012

    16.0K
    Fabricating Metamaterials Using the Fiber Drawing Method
    11:57

    Fabricating Metamaterials Using the Fiber Drawing Method

    Published on: October 18, 2012

    14.4K
    Demonstration of Equal-Intensity Beam Generation by Dielectric Metasurfaces
    09:33

    Demonstration of Equal-Intensity Beam Generation by Dielectric Metasurfaces

    Published on: June 7, 2019

    6.8K

    Area of Science:

    • Materials Science
    • Optics and Photonics
    • Condensed Matter Physics

    Background:

    • Hyperbolic metamaterials offer unique optical properties.
    • Semiconductor-based metamaterials are promising for tunable applications.
    • Indium arsenide (InAs) is a versatile material for mid-infrared applications.

    Purpose of the Study:

    • To grow and characterize layered semiconductor hyperbolic metamaterials.
    • To demonstrate tunable optical behavior in the mid-infrared spectrum.
    • To experimentally verify negative refraction in these engineered materials.

    Main Methods:

    • Molecular beam epitaxy (MBE) for material growth.
    • Fourier transform spectroscopy (FTS) for optical characterization.
    • Effective medium theory (EMT) for optical modeling.
    • Geometric optics experiments for refraction demonstration.

    Main Results:

    • Successfully grew doped and undoped InAs layered structures.
    • Achieved tunable metamaterial behavior with onset wavelengths from 5.8μm to over 10μm.
    • Demonstrated control over fill factor (0.25–0.75) for designer optical properties.
    • Observed and modeled reflection and transmission spectra.
    • Experimentally confirmed negative refraction.

    Conclusions:

    • Layered InAs structures function as hyperbolic metamaterials in the mid-infrared.
    • Tunable optical properties are achievable by controlling material composition and structure.
    • These materials exhibit designer optical behavior and negative refraction, suitable for advanced optical applications.