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Author Spotlight: Magnetometric Characterization of Intermediates in the Solid-State Electrochemistry of Redox-Active Metal-Organic Frameworks

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A Simple Approach to Boost Capacitance: Flexible Supercapacitors Based on Manganese Oxides@MOFs via Chemically

Yi-Zhou Zhang¹, Tao Cheng¹, Yang Wang¹

¹Key Laboratory for Organic Electronics and Information Displays (KLOEID) and Institute of Advanced Materials (IAM), Jiangsu National Synergetic Innovation Center for Advanced Materials (SICAM), Nanjing University of Posts and Telecommunications, 9 Wenyuan Road, Nanjing, 210023, China.

Advanced Materials (Deerfield Beach, Fla.)

|May 5, 2016

Abstract:

An extremely simple in situ self-transformation methodology is developed to introduce pseudocapacitance into the MOF system resulting in a largely boosted electrochemical performance: a three-fold increase in capacitance as well as improved rate capacity. An all-solid-state hybrid flexible supercapacitor is fabricated based on the obtained MnOx -MHCF composite and activated carbon with an areal capacitance of 175 mF cm(-2) at 0.5 mA cm(-2) .

Keywords:

magnesium oxides metal-organic frameworks supercapacitors

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MOS Capacitor

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A Metal-Oxide-Semiconductor (MOS) capacitor is a fundamental structure used extensively in semiconductor device technology, particularly in the fabrication of integrated circuits and MOSFETs (metal-oxide-semiconductor field-effect transistors). The MOS capacitor consists of three layers: a metal gate, a dielectric oxide, and a semiconductor substrate.
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