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Frequency Up-Conversion Photon-Type Terahertz Imager
1Key Laboratory of Terahertz Solid-State Technology, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, 865 Changning Road, Shanghai 200050, China.
Scientific Reports
|May 6, 2016
Summary
Pixel-less terahertz imagers overcome limitations of traditional systems. These devices use quantum-well photo-detectors and near-infrared light-emitting diodes for efficient frequency up-conversion and high-performance imaging.
Area of Science:
- Optoelectronics
- Terahertz technology
- Solid-state physics
Background:
- Terahertz imaging offers significant potential applications but faces challenges with silicon readout integrated circuits (ROICs) below 40 K.
- Thermal mismatch and ROIC failures hinder the development of terahertz focal plane arrays.
Purpose of the Study:
- To report novel pixel-less photo-type terahertz imagers.
- To demonstrate a new approach for high-performance terahertz imaging devices.
Main Methods:
- Developed integrated devices combining terahertz quantum-well photo-detectors (QWPs) and near-infrared light-emitting diodes (LEDs) on the same substrate.
- Utilized molecular beam epitaxy for device fabrication.
- Employed frequency up-conversion technique where QWP photocurrent drives LED emission.
Main Results:
- Achieved maximum internal and external energy up-conversion efficiencies of approximately 20% and 0.5%, respectively.
- Demonstrated negligible image blurring due to photocurrent spreading in pixel-less imaging.
- Successfully imaged a terahertz quantum cascade laser spot using the QWP-LED device and a Si camera.
Conclusions:
- The developed pixel-less QWP-LED imagers offer a viable alternative to conventional terahertz imaging systems.
- Optimized structural parameters ensure efficient operation of both QWP and LED components.
- This technology opens new avenues for realizing high-performance terahertz imaging devices.
