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Updated: Jun 16, 2026

Fabrication, Densification, and Replica Molding of 3D Carbon Nanotube Microstructures
Published on: July 2, 2012
Controlled Growth of Semiconducting and Metallic Single-Wall Carbon Nanotubes
1Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences , Shenyang 110016, China.
Abstract:
Single-wall carbon nanotubes (SWCNTs) can be either semiconducting or metallic depending on their chiral angles and diameters. The use of SWCNTs in electronics has long been hindered by the fact that the as-prepared SWCNTs are usually a mixture of semiconducting and metallic ones. Therefore, controlled synthesis of SWCNTs with a uniform electrical type or even predefined chirality has been a focus of carbon nanotube research in recent years. In this Perspective, we summarize recent progress on the controlled growth of semiconducting and metallic SWCNTs by in situ selective etching and by novel catalyst design. The advantages and mechanisms of these approaches are analyzed, and the challenges are discussed. Finally, we predict possible breakthroughs and future trends in the controlled synthesis and applications of SWCNTs.
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