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Gate-Tunable Atomically Thin Lateral MoS2 Schottky Junction Patterned by Electron Beam

Y Katagiri, T Nakamura1, A Ishii

  • 1Institute for Solid State Physics, The University of Tokyo , 5-1-5 Kashiwanoha, Kashiwa, Chiba 277-8581, Japan.

Nano Letters
|May 7, 2016
PubMed

Keywords:
1T phaseAtomically thin layersSchottky junctionelectron-beam irradiationsemiconductor−metal transition

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