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The contact of metal and semiconductor can lead to the formation of a junction with either Schottky or Ohmic behavior.
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Biasing metal-semiconductor junctions involves applying a voltage across the junction. Specifically, the metal is connected to a voltage source, while the semiconductor is grounded. This technique is essential for controlling the direction and magnitude of current flow in electronic devices, including diodes, transistors, and photovoltaic cells.
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Enhancement-mode MOSFETs are pivotal components in electronics, distinguished by their capacity to act as highly efficient switches. They are part of the larger family of metal-oxide Semiconductor Field-Effect Transistors (MOSFETs). They are available in two types: p-channel and n-channel, each tailored to specific polarity operations.
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Fabrication of Schottky Diodes on Zn-polar BeMgZnO/ZnO Heterostructure Grown by Plasma-assisted Molecular Beam Epitaxy
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Gate-Tunable Atomically Thin Lateral MoS2 Schottky Junction Patterned by Electron Beam.

Y Katagiri, T Nakamura1, A Ishii

  • 1Institute for Solid State Physics, The University of Tokyo , 5-1-5 Kashiwanoha, Kashiwa, Chiba 277-8581, Japan.

Nano Letters
|May 7, 2016
PubMed
Summary
This summary is machine-generated.

Researchers created molybdenum disulfide (MoS2) Schottky barrier junctions using electron beam irradiation. These 2D material devices show unique properties for integrated electronics.

Keywords:
1T phaseAtomically thin layersSchottky junctionelectron-beam irradiationsemiconductor−metal transition

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Area of Science:

  • Materials Science
  • Condensed Matter Physics
  • Nanotechnology

Background:

  • Atomically thin two-dimensional (2D) materials like molybdenum disulfide (MoS2) offer unique electronic properties.
  • MoS2 exists in a semiconducting 2H phase and a metallic 1T phase, enabling diverse applications.
  • Lateral Schottky junctions in MoS2 are crucial for integrating active and passive 2D devices.

Purpose of the Study:

  • To demonstrate and characterize Schottky barrier (SB) junctions in molybdenum disulfide (MoS2).
  • To investigate the electronic transport properties of 1T-metal/2H-semiconductor lateral MoS2 junctions.
  • To explore the potential of these junctions for novel 2D electronic devices.

Main Methods:

  • Fabrication of in-plane lateral MoS2 junctions using top-down electron beam (EB) irradiation.
  • Electrical transport measurements to characterize the formed Schottky barrier.
  • State-of-the-art simulations to support experimental findings.

Main Results:

  • First experimental evidence of a MoS2 Schottky barrier (SB) junction formed between EB-irradiated (1T) and nonirradiated (2H) regions.
  • Measured barrier height of the MoS2 SB junction ranging from 0.13 to 0.18 eV.
  • Observed unique device fingerprints characteristic of SB-based field-effect transistors from 1T MoS2 layers.

Conclusions:

  • Electron beam irradiation is an effective method for creating lateral Schottky junctions in MoS2.
  • The demonstrated MoS2 SB junctions exhibit promising properties for advanced 2D electronic applications.
  • This work paves the way for co-integration of active and passive devices on a single 2D platform.