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Updated: Mar 21, 2026

Silicon Metal-oxide-semiconductor Quantum Dots for Single-electron Pumping

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Single Quantum Level Electron Turnstile.

D M T van Zanten^1,2, D M Basko^1,3, I M Khaymovich^1,3,4

¹Université Grenoble Alpes, F-38000 Grenoble, France.

Physical Review Letters

|May 7, 2016

Summary

This summary is machine-generated.

We developed a novel single-electron source using a quantum dot (Q) and superconducting leads (S). This superconductor-quantum-dot-superconductor device enables precise electron transfer with high immunity to noise.

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Area of Science:

Quantum electronics
Solid-state physics
Nanotechnology

Background:

Electron turnstile devices are crucial for precise charge transfer.
Conventional superconductor-normal-metal-superconductor turnstiles face challenges with quasiparticle interference.
Quantum dots offer unique quantum mechanical properties for electronic devices.

Purpose of the Study:

To realize and characterize a novel single-electron source.
To demonstrate electron turnstile operation using a superconductor-quantum-dot-superconductor architecture.
To investigate the properties of this new device compared to existing technologies.

Main Methods:

Fabrication of a single-level quantum dot tunnel-coupled to two superconducting leads.
Driving the device with an ac gate voltage to induce electron turnstile operation.
Experimental analysis of current transport and electron energy distribution.

Main Results:

Successful demonstration of electron turnstile operation in a superconductor-quantum-dot-superconductor device.
Observed higher immunity to nonequilibrium quasiparticles compared to superconductor-normal-metal-superconductor devices.
Achieved delivery of electrons with a very narrow energy distribution.

Conclusions:

The superconductor-quantum-dot-superconductor single-electron source offers significant advantages.
This technology provides enhanced robustness and precision for single-electron manipulation.
Potential applications in quantum computing and metrology.