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Updated: Mar 21, 2026

Silicon Metal-oxide-semiconductor Quantum Dots for Single-electron Pumping
Published on: June 3, 2015
Single Quantum Level Electron Turnstile
D M T van Zanten1,2, D M Basko1,3, I M Khaymovich1,3,4
1Université Grenoble Alpes, F-38000 Grenoble, France.
Abstract:
We report on the realization of a single-electron source, where current is transported through a single-level quantum dot (Q) tunnel coupled to two superconducting leads (S). When driven with an ac gate voltage, the experiment demonstrates electron turnstile operation. Compared to the more conventional superconductor-normal-metal-superconductor turnstile, our superconductor-quantum-dot-superconductor device presents a number of novel properties, including higher immunity to the unavoidable presence of nonequilibrium quasiparticles in superconducting leads. Moreover, we demonstrate its ability to deliver electrons with a very narrow energy distribution.
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