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Probing Quantum Capacitance in a 3D Topological Insulator
D A Kozlov1,2,3, D Bauer3, J Ziegler3
1A. V. Rzhanov Institute of Semiconductor Physics, Novosibirsk 630090, Russia.
Abstract:
We measure the quantum capacitance and probe thus directly the electronic density of states of the high mobility, Dirac type two-dimensional electron system, which forms on the surface of strained HgTe. Here we show that observed magnetocapacitance oscillations probe-in contrast to magnetotransport-primarily the top surface. Capacitance measurements constitute thus a powerful tool to probe only one topological surface and to reconstruct its Landau level spectrum for different positions of the Fermi energy.
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