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Analysis of Contact Interfaces for Single GaN Nanowire Devices
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Correction: Ambient temperature deposition of gallium nitride/gallium oxynitride from a deep eutectic electrolyte,

Sujoy Sarkar1, S Sampath

  • 1Department of Inorganic and Physical Chemistry, Indian Institute of Science, Bangalore-560012, India. sampath@ipc.iisc.ernet.in.

Chemical Communications (Cambridge, England)
|May 11, 2016
PubMed

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