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Published on: July 5, 2019
Building Large-Domain Twisted Bilayer Graphene with van Hove Singularity
Zhenjun Tan1,2, Jianbo Yin1, Cheng Chen3
1Center for Nanochemistry, Beijing Science and Engineering Center for Nanocarbons, Beijing National Laboratory for Molecular Sciences, College of Chemistry and Molecular Engineering, Peking University , Beijing 100871, P. R. China.
Researchers developed a scalable method for producing high-quality twisted bilayer graphene (tBLG) with controlled twist angles. This advancement enables enhanced electronic properties and high-performance photodetectors.
Area of Science:
- Materials Science
- Condensed Matter Physics
- Nanotechnology
Background:
- Twisted bilayer graphene (tBLG) exhibits unique phenomena due to van Hove Singularities (VHS).
- Scalable, angle-controlled production of high-quality tBLG remains a significant challenge.
- Interfacial contamination hinders the desired electronic properties in tBLG.
Purpose of the Study:
- To develop a facile and scalable method for preparing high-quality tBLG with controlled twist angles.
- To investigate the electronic structure and optical properties of the synthesized tBLG.
- To fabricate high-performance photodetectors utilizing the unique properties of tBLG.
Main Methods:
- Layer-by-layer transfer of graphene monolayers without polymer contamination.
- Angle-resolved photoemission spectroscopy (ARPES) with submicrometer spatial resolution.
- Fabrication of photodetectors from the synthesized tBLG.
Main Results:
- Achieved large domain sizes (>100 μm) tBLG with controlled twist angles.
- Confirmed the formation of minigaps and VHSs in the electronic structure via micro-ARPES.
- Observed a ~20-fold enhancement in Raman G-band intensity, indicating high quality.
- Demonstrated photodetectors with up to ~6 times enhanced photocurrent generation.
Conclusions:
- The developed clean transfer method enables scalable production of high-quality, angle-controlled tBLG.
- The resulting tBLG exhibits strong light-matter interactions due to VHS.
- This tBLG is suitable for fabricating high-performance optoelectronic devices like photodetectors.
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