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Updated: Mar 21, 2026

Using Synchrotron Radiation Microtomography to Investigate Multi-scale Three-dimensional Microelectronic Packages
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Using Synchrotron Radiation Microtomography to Investigate Multi-scale Three-dimensional Microelectronic Packages.

Holly D Carlton1, John W Elmer2, Yan Li3

  • 1Materials Engineering Division, Lawrence Livermore National Laboratory; carlton4@llnl.gov.

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Summary

Synchrotron radiation micro-tomography (SRµT) enables rapid, high-resolution 3D imaging of large microelectronic packages. This advanced technique overcomes conventional limitations for efficient failure analysis.

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Area of Science:

  • Materials Science
  • Imaging Technology
  • Electrical Engineering

Background:

  • Conventional computed tomography (CT) faces limitations in imaging large microelectronic packages due to the trade-off between resolution and sample volume.
  • Failure analysis in the electronics industry requires non-destructive 3D imaging of complex, multi-level interconnections.
  • Existing CT systems are often too slow and offer insufficient resolution for detailed analysis of microelectronic packages.

Purpose of the Study:

  • To detail the experimental setup and methodology for imaging entire 3D microelectronic packages using synchrotron radiation micro-tomography (SRµT).
  • To demonstrate the capability of SRµT to achieve high spatial resolution (8.7 µm) for large sample areas (16 x 16 mm) within short scan times (< 3 min).
  • To highlight the advantages of SRµT over conventional CT for microelectronic failure analysis.

Main Methods:

  • Utilized the adaptable micro-tomography beamline at the Advanced Light Source (ALS) with monochromatic or white light modes.
  • Developed experimental steps to image a 16 x 16 mm microelectronic package, achieving 8.7 µm spatial resolution.
  • Performed scans on packages in various orientations and a sectioned package for comparative analysis.

Main Results:

  • Successfully acquired 3D images of an entire 16 x 16 mm microelectronic package with 8.7 µm spatial resolution in under 3 minutes.
  • Demonstrated SRµT's ability to image large cross-sections (up to 36 x 36 mm) with high resolution.
  • Achieved a significantly higher field-of-view to throughput time ratio compared to conventional CT systems.

Conclusions:

  • SRµT provides a powerful, efficient, and non-destructive method for 3D failure analysis of microelectronic packages.
  • The described experimental setup is adaptable for various multi-material samples, offering a significant advancement over conventional imaging techniques.
  • SRµT overcomes the resolution-volume trade-off, enabling detailed micron-scale analysis of large electronic systems.