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Characterization of Graphene-based FET Fabricated using a Shadow Mask
Dung Hoang Tien1, Jun-Young Park1, Ki Buem Kim1
1Faculty of Nanotechnology &Advanced Materials, HMC, and GRI, Sejong University, Seoul 143-747, South Korea.
Scientific Reports
|May 13, 2016
Summary
A novel lithography-free method using a shadow mask fabricates clean graphene field-effect transistors (FETs). These devices exhibit high gas sensitivity due to reduced surface contamination, overcoming residue issues from traditional patterning.
Area of Science:
- Materials Science
- Nanotechnology
- Electrical Engineering
Background:
- Traditional lithography for patterning graphene uses solvents, leaving residues that contaminate the graphene surface.
- These residues are difficult to remove completely, impacting graphene device performance and reliability.
Purpose of the Study:
- To develop a lithography-free fabrication method for graphene-based field-effect transistors (FETs).
- To investigate the impact of fabrication methods on graphene surface cleanliness and gas sensitivity.
- To analyze the environmental gas adsorption/desorption effects on graphene FETs.
Main Methods:
- Fabrication of graphene-based FETs using a micro-grid as a shadow mask, avoiding chemical resists.
- Electrical measurements of fabricated graphene FETs in both air and vacuum environments.
- Analysis of Dirac peak shifts in gate voltage as a function of air pressure.
Main Results:
- The lithography-free shadow mask method successfully fabricated graphene FETs with reduced surface contamination.
- Dirac peaks in graphene devices shifted towards negative gate voltages with decreasing air pressure.
- Rapid Dirac peak shifts were observed at low pressures (~2×10⁻³ to 5×10⁻⁵ Torr) within minutes, indicating high gas sensitivity.
Conclusions:
- The shadow mask fabrication technique provides a cleaner graphene surface compared to traditional lithography.
- The clean graphene surface in shadow mask-fabricated devices enhances sensitivity to environmental gas adsorption and desorption.
- This lithography-free approach offers a promising route for developing high-performance, sensitive graphene-based electronic devices.
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