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Giant edge state splitting at atomically precise graphene zigzag edges.

Shiyong Wang1, Leopold Talirz1, Carlo A Pignedoli1,2

  • 1Nanotech@surfaces Laboratory, Empa, Swiss Federal Laboratories for Materials Science and Technology, 8600 Dübendorf, Switzerland.

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|May 17, 2016
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Summary
This summary is machine-generated.

Atomically precise graphene nanoribbons with zigzag edges host localized electronic states. Decoupling these nanoribbons from metallic substrates reveals their intrinsic spin-polarized edge states, dominated by electron-electron interactions.

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Area of Science:

  • Condensed Matter Physics
  • Materials Science
  • Nanotechnology

Background:

  • Graphene nanostructures with zigzag edges exhibit localized electronic states with predicted spin polarization.
  • Edge roughness and substrate interactions can significantly alter the intrinsic electronic and magnetic properties of these states.

Purpose of the Study:

  • To investigate the intrinsic electronic structure of localized states at the zigzag edges of atomically precise graphene nanoribbons.
  • To decouple the graphene nanoribbons from metallic substrates to eliminate extrinsic influences.

Main Methods:

  • Fabrication of atomically precise graphene nanoribbons with controlled zigzag edges.
  • Transfer of nanoribbons from metallic growth substrates to insulating NaCl islands using scanning tunneling microscopy.
  • Scanning tunneling spectroscopy (STS) to probe electronic states.
  • Ab initio many-body perturbation theory calculations for theoretical validation.

Main Results:

  • Successful decoupling of graphene nanoribbons from metallic substrates, confirmed by STS.
  • Observation of a pair of occupied/unoccupied localized edge states.
  • Large energy splitting of 1.9 eV between these edge states.

Conclusions:

  • Electron-electron interactions play a dominant role in the localized edge states of graphene nanoribbons.
  • The study provides insights into the intrinsic electronic and magnetic properties of graphene nanoribbon edge states, free from substrate effects.