Near Room-Temperature Memory Devices Based on Hybrid Spin-Crossover@SiO2 Nanoparticles Coupled to Single-Layer
Anastasia Holovchenko1, Julien Dugay1, Mónica Giménez-Marqués2
1Kavli Institute of Nanoscience, Delft University of Technology, Lorentzweg 1, 2628 CJ, Delft, The Netherlands.
Advanced Materials (Deerfield Beach, Fla.)
|May 18, 2016
Abstract:
The charge transport properties of SCO [Fe(Htrz)2 (trz)](BF4 ) NPs covered with a silica shell placed in between single-layer graphene electrodes are reported. A reproducible thermal hysteresis loop in the conductance above room-temperature is evidenced. This bistability combined with the versatility of graphene represents a promising scenario for a variety of technological applications but also for future sophisticated fundamental studies.
