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Nanofabrication of Gate-defined GaAs/AlGaAs Lateral Quantum Dots
Published on: November 1, 2013
Signatures of single quantum dots in graphene nanoribbons within the quantum Hall regime
Endre Tóvári1, Péter Makk2, Peter Rickhaus2
1Department of Physics, Budapest University of Technology and Economics, and Condensed Matter Research Group of the Hungarian Academy of Sciences, Budafoki út 8, 1111 Budapest, Hungary. csonka@mono.eik.bme.hu.
Abstract:
We report on the observation of periodic conductance oscillations near quantum Hall plateaus in suspended graphene nanoribbons. They are attributed to single quantum dots that are formed in the narrowest part of the ribbon, in the valleys and hills of a disorder potential. In a wide flake with two gates, a double-dot system's signature has been observed. Electrostatic confinement is enabled in single-layer graphene due to the gaps that are formed between the Landau levels, suggesting a way to create gate-defined quantum dots that can be accessed with quantum Hall edge states.

