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Pulsed laser deposited GeTe-rich GeTe-Sb2Te3 thin films
M Bouška1, S Pechev2, Q Simon2
1Department of Graphic Arts and Photophysics, Faculty of Chemical Technology, University of Pardubice, Studentská 573, 53210 Pardubice, Czech Republic.
Scientific Reports
|May 21, 2016
Summary
This study fabricated germanium-telluride (GeTe) rich GeTe-Sb2Te3 amorphous thin films. Higher GeTe content enhanced the optical and electrical contrast between amorphous and crystalline states, crucial for phase-change memory applications.
Area of Science:
- Materials Science
- Thin Film Technology
- Nanotechnology
Background:
- Germanium-telluride-antimony-telluride (Ge2Sb2Te5, GST) materials are crucial for non-volatile memory devices.
- Understanding the impact of material composition on phase-change properties is essential for device optimization.
Purpose of the Study:
- To investigate the effect of varying GeTe content on the physico-chemical properties of GeTe-Sb2Te3 amorphous thin films.
- To evaluate the potential of these materials for phase-change memory applications by analyzing their amorphous and crystalline states.
Main Methods:
- Pulsed laser deposition (PLD) for fabricating Ge-Te rich GeTe-Sb2Te3 (Ge6Sb2Te9, Ge8Sb2Te11, Ge10Sb2Te13, Ge12Sb2Te15) thin films.
- Comprehensive characterization using SEM-EDX, XRD, AFM, Raman spectroscopy, optical reflectivity, sheet resistance measurements, and variable angle spectroscopic ellipsometry.
- Analysis of both as-deposited (amorphous) and annealed (crystalline) film states.
Main Results:
- Significant changes in optical functions and electrical resistance were observed upon crystallization, creating a large contrast between amorphous and crystalline phases.
- Crystallization led to notable variations in film thickness, density, and roughness.
- High reflectivity contrast (~0.21 at 405 nm) was achieved for Ge8Sb2Te11, Ge10Sb2Te13, and Ge12Sb2Te15 compositions.
Conclusions:
- The GeTe content in GeTe-Sb2Te3 films significantly influences their optical and electrical properties.
- Increased GeTe content enhances the optical and electrical contrast between amorphous and crystalline states, making these materials promising for phase-change memory applications.
- The observed changes in physical properties during crystallization are critical for device performance and stability.
