Ultrafast Response p-Si/n-ZnO Heterojunction Ultraviolet Detector Based on Pyro-Phototronic Effect
Zhaona Wang1, Ruomeng Yu2, Xingfu Wang2
1Department of Physics, Applied Optics Beijing Area Major Laboratory, Beijing Normal University, Beijing, 100875, China.
Advanced Materials (Deerfield Beach, Fla.)
|May 25, 2016
Abstract:
A light-self-induced pyro-phototronic effect in wurtzite ZnO nanowires is proposed as an effective approach to achieve ultrafast response ultraviolet sensing in p-Si/n-ZnO heterostructures. The relatively long response/recovery time of zinc-oxide-based ultraviolet sensors in air/vacuum has long been an obstacle to developing such detectors for practical applications. The response/recovery time and photoresponsivity are greatly improved by the pyro-phototronic effect.
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