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A Study on Electrical Reliability Criterion on Through Silicon Via Packaging

Ben-Je Lwo¹, Kuo-Hao Tseng², Kun-Fu Tseng³

¹Department of Mechanical and Aerospace Engineering, Chung-Cheng Institute of Technology, National Defense University, Tao-Yuan 335, Taiwan

Journal of Electronic Packaging

|May 26, 2016

Abstract:

Three-dimensional (3D) structure with through silicon via (TSV) technology is emerging as a key issue in microelectronic packaging industry, and electrical reliability has become one of the main technical subjects for the TSV designs. However, criteria used for TSV reliability tests have not been consistent in the literature, so that the criterion itself becomes a technical argument. To this end, this paper first performed several different reliability tests on the testing packaging with TSV chains, then statistically analyzed the experimental data with different failure criteria on resistance increasing, and finally constructed the Weibull failure curves with parameter extractions. After comparing the results, it is suggested that using different criteria may lead to the same failure mode on Weibull analyses, and 65% of failed devices are recommended as a suitable termination for reliability tests.

Keywords:

3D packaging TSV (through silicon via)reliability criterion

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