Search research articles

ABOUT JoVE

Overview Leadership Blog JoVE Help Center

AUTHORS

Publishing Process Editorial Board Scope & Policies Peer Review FAQ Submit

LIBRARIANS

Testimonials Subscriptions Access Resources Library Advisory Board FAQ

RESEARCH

JoVE Journal Methods Collections JoVE Encyclopedia of Experiments Archive

EDUCATION

JoVE Core JoVE Business JoVE Science Education JoVE Lab Manual Faculty Resource Center Faculty Site

Terms & Conditions of Use

Related Concept Videos

Characteristics of MOSFET

Characteristics of MOSFET

Metal-oxide-semiconductor field-effect Transistors, or MOSFETs, play a critical role in electronic circuits. They are primarily utilized for amplifying and switching signals.
Various vital parameters influence their functionality, which is crucial for theory and electronics applications. First, channel dimensions, precisely length, and width, are pivotal. The size of these channels affects the transistor's ability to carry current and switching speeds; shorter channels typically enable...

Distribution Reliability and Automation

Distribution Reliability and Automation

Distribution reliability in electrical power systems is critical for ensuring an uninterrupted power supply to consumers at minimal cost. According to IEEE Standard Terms, reliability is the probability that a device will function without failure over a specified time period or amount of usage. For electric power distribution, this translates to maintaining continuous power supply and addressing customer concerns over power outages. Several indices, as defined by IEEE Standard 1366-2012, are...

Yield Criteria for Ductile Materials under Plane Stress

Yield Criteria for Ductile Materials under Plane Stress

In designing structural elements and machine parts using ductile materials, it is crucial to ensure that these components withstand applied stresses without yielding. Yielding is initially determined through a tensile test, which evaluates the material's response to uniaxial stress. However, tensile stress is insufficient when components face biaxial or plane stress conditions This condition requires advanced criteria to predict failure.
The Maximum Shearing Stress Criterion, also known as...

MOSFET

MOSFET

The Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET) plays a pivotal role in modern electronics thanks to its versatility and efficiency in controlling electrical currents. This device, also known as IGFET, MISFET, and MOSFET, has three main terminals: the Source, Drain, and Gate. MOSFETs are classified into n-channel or p-channel types based on the doping characteristics of their substrate and the source or drain regions.
In an n-MOSFET, the structure includes n-type source and drain...

Insulation Coordination

Insulation Coordination

Insulation coordination is the process of matching electric equipment's insulation strength with protective device characteristics to protect the equipment against expected overvoltages. This selection is based on engineering judgment and cost. Equipment can generally withstand short-duration high transient overvoltages, but repeated tests with identical waveforms can yield inconsistent results. As a result, standard impulse voltage waveforms are used for testing, defined by specific times...

Non-ohmic Devices

Non-ohmic Devices

In most substances, the current flow is proportional to the voltage applied to it. A simple relationship between the values of current, voltage, and resistance is known as Ohm's law. Nonohmic devices do not exhibit a linear relationship between voltage and current. One such device is the semiconducting circuit element known as a diode. A diode is a circuit device that allows current flow in only one direction.
Consider a simple circuit consisting of a battery, a diode, and a resistor. A...

You might also read

Related Articles

Articles linked to this work by shared authors, journal, and citation graph.

Sort by

Same author

Effect of subsurface pressure on the interface pressure measurement in an in vitro experiment.

Phlebology·2019

Same author

Comparison of piezoresistive sensor to PicoPress® in in-vitro interface pressure measurement.

Phlebology·2017

See all related articles

Search research articles

Related Experiment Video

Updated: Mar 20, 2026

In Situ Time-dependent Dielectric Breakdown in the Transmission Electron Microscope: A Possibility to Understand the Failure Mechanism in Microelectronic Devices

In Situ Time-dependent Dielectric Breakdown in the Transmission Electron Microscope: A Possibility to Understand the Failure Mechanism in Microelectronic Devices

Published on: June 26, 2015

A Study on Electrical Reliability Criterion on Through Silicon Via Packaging.

Ben-Je Lwo¹, Kuo-Hao Tseng², Kun-Fu Tseng³

¹Department of Mechanical and Aerospace Engineering, Chung-Cheng Institute of Technology, National Defense University, Tao-Yuan 335, Taiwan

Journal of Electronic Packaging

|May 26, 2016

Summary

This summary is machine-generated.

This study addresses inconsistent reliability testing criteria for through-silicon via (TSV) technology. It recommends using 65% of failed devices as a standard termination point for TSV reliability tests.

Keywords:

3D packaging TSV (through silicon via)reliability criterion

More Related Videos

In Depth Analyses of LEDs by a Combination of X-ray Computed Tomography CT and Light Microscopy LM Correlated with Scanning Electron Microscopy SEM

In Depth Analyses of LEDs by a Combination of X-ray Computed Tomography CT and Light Microscopy LM Correlated with Scanning Electron Microscopy SEM

Published on: June 16, 2016

Using Synchrotron Radiation Microtomography to Investigate Multi-scale Three-dimensional Microelectronic Packages

Using Synchrotron Radiation Microtomography to Investigate Multi-scale Three-dimensional Microelectronic Packages

Published on: April 13, 2016

Related Experiment Videos

Last Updated: Mar 20, 2026

In Situ Time-dependent Dielectric Breakdown in the Transmission Electron Microscope: A Possibility to Understand the Failure Mechanism in Microelectronic Devices

In Situ Time-dependent Dielectric Breakdown in the Transmission Electron Microscope: A Possibility to Understand the Failure Mechanism in Microelectronic Devices

Published on: June 26, 2015

In Depth Analyses of LEDs by a Combination of X-ray Computed Tomography CT and Light Microscopy LM Correlated with Scanning Electron Microscopy SEM

In Depth Analyses of LEDs by a Combination of X-ray Computed Tomography CT and Light Microscopy LM Correlated with Scanning Electron Microscopy SEM

Published on: June 16, 2016

Using Synchrotron Radiation Microtomography to Investigate Multi-scale Three-dimensional Microelectronic Packages

Using Synchrotron Radiation Microtomography to Investigate Multi-scale Three-dimensional Microelectronic Packages

Published on: April 13, 2016

Area of Science:

Electrical Engineering
Materials Science
Semiconductor Manufacturing

Background:

Three-dimensional (3D) packaging utilizing through-silicon via (TSV) technology is critical in the microelectronics industry.
Ensuring the electrical reliability of TSV designs is a significant technical challenge.
Inconsistent reliability testing criteria in existing literature create ambiguity and technical debate.

Purpose of the Study:

To investigate the impact of different failure criteria on TSV reliability testing.
To statistically analyze experimental data from TSV reliability tests.
To establish a consistent and recommended criterion for TSV reliability testing termination.

Main Methods:

Conducted multiple reliability tests on test packages incorporating TSV chains.
Performed statistical analysis of experimental data using various resistance-increasing failure criteria.
Constructed Weibull failure curves with parameter extraction for comparative analysis.

Main Results:

Different failure criteria can lead to consistent failure modes when analyzed using Weibull plots.
Statistical analysis revealed patterns in device failure based on resistance changes.
Weibull analysis provided insights into the failure mechanisms of TSV structures.

Conclusions:

A unified approach to failure criteria is needed for reliable TSV characterization.
The study recommends terminating reliability tests at 65% of failed devices.
This proposed criterion offers a more consistent basis for evaluating TSV electrical reliability.