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Fabrication of Schottky Diodes on Zn-polar BeMgZnO/ZnO Heterostructure Grown by Plasma-assisted Molecular Beam Epitaxy
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MgZnO/ZnO heterostructures with electron mobility exceeding 1 × 10(6) cm(2)/Vs

Joseph Falson1,2,3, Yusuke Kozuka1, Masaki Uchida1

  • 1Department of Applied Physics and Quantum-Phase Electronics Center (QPEC), The University of Tokyo, Tokyo 113-8656, Japan.

Scientific Reports
|May 28, 2016
PubMed

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