Sub-nanosecond Yb:KLu(WO₄)₂ microchip laser

A diode-pumped Yb:KLu(WO₄)₂ microchip laser passively Q-switched by a Cr⁴⁺:YAG saturable absorber generated a maximum average output power of 590 mW at 1031 nm with a slope efficiency of 55%. The pulse characteristics were 690 ps/47.6 μJ at a pulse repetition frequency of 12.4 kHz. The output beam had an excellent circular profile with M²<1.05. Yb:KLu(WO₄)₂ is very promising for ultrathin sub-ns microchip lasers.