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Sub-nanosecond Yb:KLu(WO₄)₂ microchip laser.

P Loiko, J M Serres, X Mateos

|June 1, 2016

Summary

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A novel Ytterbium-doped potassium lithium tungstate (Yb:KLu(WO₄)₂) microchip laser achieved high output power and efficiency. This laser system shows significant promise for developing ultrathin, sub-nanosecond pulsed laser sources.

Area of Science:

Laser Physics
Materials Science
Optoelectronics

Background:

Microchip lasers offer compact and efficient laser solutions.
Ytterbium-doped materials are suitable for diode-pumping and near-infrared emission.
Passively Q-switching enables pulsed laser operation with high peak powers.

Purpose of the Study:

To investigate the performance of a diode-pumped Yb:KLu(WO₄)₂ microchip laser.
To characterize the laser's output power, efficiency, and pulse properties.
To assess the potential of Yb:KLu(WO₄)₂ for ultrathin, sub-nanosecond laser applications.

Main Methods:

A diode-pumped Yb:KLu(WO₄)₂ microchip laser was designed and fabricated.
Passive Q-switching was achieved using a Cr⁴⁺:YAG saturable absorber.

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Output power, slope efficiency, pulse duration, pulse energy, and beam quality (M²) were measured.

Main Results:

The laser achieved a maximum average output power of 590 mW at 1031 nm.
A high slope efficiency of 55% was recorded.
Ultrashort pulses of 690 ps with 47.6 μJ energy at 12.4 kHz repetition frequency were generated.
The output beam exhibited excellent circularity with M²<1.05.

Conclusions:

The Yb:KLu(WO₄)₂ microchip laser demonstrates excellent performance characteristics.
This material is highly promising for the development of ultrathin, sub-nanosecond pulsed laser systems.
The results highlight the potential for compact and efficient laser sources in various applications.