Ultralow-frequency Raman system down to 10 cm(-1) with longpass edge filters and its application to the interface

M-L Lin1, F-R Ran2, X-F Qiao1

  • 1State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China.

Summary

Researchers developed an accessible ultralow-frequency (ULF) Raman spectroscopy method for 2D materials. This technique enables high-throughput measurement of ULF Raman signals, revealing insights into twisted bilayer graphenes.