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Active inductor based fully integrated CMOS transmit/ receive switch for 2.4 GHz RF transceiver.

Mohammad A S Bhuiyan1, Yeoh Zijie1, Jae S Yu2

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This study presents a compact, high-performance Transmit/Receive (T/R) switch for RF transceivers. The novel design achieves excellent isolation and low insertion loss, crucial for modern wireless devices.

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Area of Science:

  • Electrical Engineering
  • Materials Science

Background:

  • High-performance Transmit/Receive (T/R) switches are essential components in modern Radio Frequency (RF) transceivers.
  • Existing T/R switches often struggle to balance critical performance parameters like isolation and insertion loss.

Purpose of the Study:

  • To design and develop a T/R switch with superior isolation and minimal insertion loss for 2.4GHz ISM band RF transceivers.
  • To achieve a better trade-off among performance parameters using advanced design techniques.

Main Methods:

  • Utilized Silterra 0.13µm CMOS process for fabrication.
  • Implemented transistor aspect ratio optimization, gate bias resistance, resistive body floating, and active inductor-based parallel resonance techniques.
  • Focused on creating a compact design by avoiding bulky external components.

Main Results:

  • Achieved 0.85dB insertion loss and 45.17dB isolation in both transmit and receive modes.
  • Demonstrated competitive power handling capability (P1dB) of 11.35dBm and linearity (IIP3) of 19.60dBm.
  • Resulted in a highly compact T/R switch occupying only 0.003mm² of silicon area.

Conclusions:

  • The proposed active inductor-based T/R switch offers an excellent balance of performance and compactness.
  • This design is highly suitable for electronic industries prioritizing low-power, high-performance, and miniaturized devices.
  • The compact nature of the switch contributes to reduced transceiver costs.